AIST has produced several laminae of diamond single crystals with uniform properties by adopting the Direct Wafer-making technique, and bonded these laminae together to obtain a large-area wafer. We ...

BANGALORE, India, May 16, 2025 /PRNewswire/ -- The Global Temporary Wafer Bonding Materials Market is Segmented by Type (Thermoplastic Materials, UV Curing Materials, Composite Films, Metallic ...

A world-first N-polar GaN wafer created by Chinese scientists could ... And finally, yield rates have significantly improved, with bonding interface yields surpassing 99 per cent.

In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

We are thrilled to receive this initial production purchase order, signaling their commitment to move forward with volume production wafer level burn-in of their GaN devices on our FOX-XP platform.

BANGALORE, India, May 16, 2025 /PRNewswire/ -- The Global Temporary Wafer Bonding Materials Market is Segmented by Type (Thermoplastic Materials, UV Curing Materials, Composite Films, Metallic ...