International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China ...

This structure can also be bonded to devices on a Si CMOS wafer with the oxide layer as the bonding interface, forming a device with GaN circuitry integrated with standard Si CMOS devices. This is a ...

As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in ...

"We are excited to partner with Polar to scale our proven GaN technology to 200mm wafers and leverage our know-how across broad power conversion markets ranging from Infrastructure & AI to Energy & ...

Nature Research Intelligence Topics enable transformational understanding and discovery in research by categorising any document into meaningful, accessible topics. Read this blog to understand ...

The collaboration aims to provide a reliable supply of high-quality, wafer-scale, single crystal diamond for key applications, including 6G wireless components, advanced power and RF electronics, ...

Other efforts focus on improving SiC wafer yield and supply, with innovations like engineered substrates from Soitec and Sumitomo Mining. Power GaN sees a shift to 8-inch GaN-on-Si, driven by ...

The first obstacle is the GaN material itself. While free-standing GaN wafers exist, so far they are limited to only 100mm in diameter. GaN on silicon is easier to manufacture and economically ...