Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

Abstract: During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical ...

Boise State University researchers have unveiled a cutting-edge approach to manufacturing flexible hybrid circuits—reducing ...

Though the I2C bus can run for years without issues, sensors often “lock up” in practice, blocking all communication. A ...

Abstract: The design of single-channel MOS analog integrated circuits is discussed. Simple models are presented and approximate design equations are given for basic analog cells. The emphasis is on ...