Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the ...

Abstract: During the short circuit of a vertical 4H-SiC power MOSFET, a high gate current starts to flow through the gate dielectric. We demonstrate that the Schottky emission is the main physical ...

Boise State University researchers have unveiled a cutting-edge approach to manufacturing flexible hybrid circuits—reducing ...

Though the I2C bus can run for years without issues, sensors often “lock up” in practice, blocking all communication. A ...

Recent technological advances have enabled the development of a wide range of increasingly sophisticated wearable and ...