This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg.

The results indicate that hetero-channel TFET-based circuits with Dual Oxide (DOX) device design to reduce the Miller capacitance provide the potential to achieve high-speed low-power operation at ...

ROHM's 4th generation silicon carbide (SiC) metal-oxide-semiconductor field-effect Transistor (MOSFET) bare chip has been ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Analog circuit design using MOS transistors represents a dynamic and rapidly evolving field that is integral to modern electronics. Exploiting the inherent advantages of MOS technology—such as ...

Most silicon electronic circuits use a combination of n- and p-type transistors. However, the first 2D circuits were built from only n-type or only p-type transistors 8.

Opt for this if you want a budget inverter with display, good backup, and ease of use. The Microtek Luxe 1400 offers a pure sine wave output, making it ideal for sensitive electronic devices.

In 2025, selecting a 1 ton inverter AC is crucial for efficient cooling in small rooms. Key models include LG, Samsung, Voltas, and Blue Star, each offering features like energy-saving modes ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...