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Entropy engineering opens new avenue for robust quantum anomalous Hall effect in 2D magnets
Institute for Superconducting and Electronic Materials (ISEM) has addressed a 40-year-old quantum puzzle, unlocking a new ...
C&EN16d
A High-Density Array of Size-Controlled Silicon Nanodots in a Silicon Oxide Nanowire by Electron-Stimulated Oxygen Expulsion | Nano Letters - ACS Publications
Methods of producing Si nanodots embedded in films of silicon oxide and silicon nitride abound, but fabrication of Si nanodots in a nanowire of these materials is very rare despite the fact that ...
C&EN16d
Electron-Enhanced Deposition of Titanium-, Silicon- and Tungsten-Containing Films at Low Temperatures Using Volatile Precursors with Various Reactive ... - ACS Publications
Electron-enhanced atomic layer deposition (EE-ALD) and electron-enhanced chemical vapor deposition (EE-CVD) can be employed for the low temperature deposition of thin films using volatile precursors ...
IEEE18d
Verification of electron distributions in silicon by means of hot carrier luminescence measurements | IEEE Journals & Magazine | IEEE Xplore
This paper investigates the use of hot carrier luminescence (HCL) measurements as a mean for the verification of carrier energy distribution functions in submicron silicon devices subject to high ...
IEEE20d
Near-infrared channel waveguides formed by electron-beam irradiation of silica layers on silicon substrates - IEEE Xplore
Results are presented for channel guides formed by electron beam irradiation of silica layers formed on Si substrates by plasma-enhanced chemical vapor deposition. Electroplating is shown to be a ...