Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan Article Views are the COUNTER-compliant sum of full text article downloads since ...

Abstract: Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid ...

This innovative switch incorporates a common-drain architecture and a dual-gate structure, employing Infineon’s advanced gate injection transistor (GIT) technology to deliver a monolithic ...

Abstract: This paper presents the quantum analytical model, based on the self-consistent solution of 1-D Schrödinger equation and 2-D Poisson's equation for the ultrascaled dual-material double-gate ...