Abstract: Analytic models for channel potential and the subthreshold swing of the dual-material double-gate (DMDG) metal-oxide-semiconductor field-effect transistor (MOSFET) are presented. To avoid ...

Abstract: This paper presents the quantum analytical model, based on the self-consistent solution of 1-D Schrödinger equation and 2-D Poisson's equation for the ultrascaled dual-material double-gate ...

One of the staff members who worked on Baldur's Gate 3 has slammed the poor quality of the game's official Dungeons & Dragons minis on social media.

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

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This innovative switch incorporates a common-drain architecture and a dual-gate structure, employing Infineon’s advanced gate injection transistor (GIT) technology to deliver a monolithic ...

Hunan Institute of Advanced Sensing and Information Technology, Xiangtan University, Xiangtan, Hunan 411105, China ...