ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

Abstract: In this work, an analytical model is developed for monolayer, dielectric-modulated (DM), double gate (DG), Transition Metal Dichalcogenide ... to SNR of contemporary state-of-the-art ...

Although the weakness of its gate-oxide and the relatively low short-circuit time capability are known limitations, this device reveals interesting unique properties. In this paper the authors explore ...