The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new ...

But as 3D NAND becomes more cost competitive, the devices are moving beyond the enterprise. “We (will bolster) our product competitiveness by expanding V-NAND in all segments of SSDs,” said Ji Ho Pak, ...

Researchers have developed a hydrogen fluoride plasma technique that doubles the etching rate in the manufacturing process of 3D NAND flash memory chips. Standard NAND flash storage is used in ...

South Korea's NAND flash leaders, Samsung and SK Hynix, face a potential threat as Yangtze Memory Technologies Corp. (YMTC) takes the lead in hybrid bonding for 400+ layer 3D NAND. YMTC continues to ...

It focuses on 3D NAND flash memory, a critical component in storage devices like SSDs, smartphones, and data centers, and most famously developed Xtacking technology, a proprietary architecture ...

The company has a new memory architecture called high-bandwidth flash that fuses the massive storage capacity of 3D NAND with the kind of bandwidth offered by HBM. This hybrid creation stacks up a ...