Nexperia has announced two 1200V 20A SiC Schottky diodes designed to address the demand for ultra-low power loss rectifiers ...

Mark Ng, TI Director of Automotive Systems, talks through several innovations featured by the company at the PCIM event, including the first automative qualified inductor-inductor-capacitor (LLC) ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Singapore has opened the National Semiconductor Translation and Innovation Centre for GaN; the country's first national ...

For the last year Japanese chemical company Resonac and Tohoku University have been exploring using SiC powder, produced from ...

Troubled US SiC semiconductor company Wolfspeed has appointed Gregor Van Issum as CFO, effective September 1, 2025. He ...

Nordic Semiconductor has announced the new nPM1304 Power Management IC (PMIC). Building on the success formula of the ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...