A group of scientists led by the Universidad Complutense de Madrid in Spain has fabricated an intermediate band (IB) solar cell based on gallium phosphide (Gap) and titanium (Ti) for the first time.
The synthesis involved a gallium arsenide (GaAs) solar cell with a gallium indium arsenide phosphide emitter layer. NREL has unveiled a new design for III-V rear heterojunction solar cells based ...
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