In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

Based on the global industry standard for high-volume-manufacturing (HVM) wafer bonding, the new GEMINI equipment platform includes a newly designed high-force bond chamber that ensures excellent ...

The EV Group (EVG), a provider of process solutions for semiconductor designs and chip integration schemes, has unveiled the next-generation version of its GEMINI automated production wafer bonding ...