The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new ...

Samsung claims that its new 4xx-layer 3D TLC NAND has a storage density of 28 Gb/mm². That's just slightly lower than Samsung's 1Tb 3D QLC V-NAND, which has a storage density of 28.5 Gb/mm² ...

But as 3D NAND becomes more cost competitive, the devices are moving beyond the enterprise. “We (will bolster) our product competitiveness by expanding V-NAND in all segments of SSDs,” said Ji Ho Pak, ...

South Korea's NAND flash leaders, Samsung and SK Hynix, face a potential threat as Yangtze Memory Technologies Corp. (YMTC) takes the lead in hybrid bonding for 400+ layer 3D NAND. YMTC continues to ...

The company has a new memory architecture called high-bandwidth flash that fuses the massive storage capacity of 3D NAND with the kind of bandwidth offered by HBM. This hybrid creation stacks up a ...

The 10th Gen V-NAND device that Samsung presented at ISSCC is a 3D TLC NAND device with over 400 active layers, a 1 Tb capacity per die, and a 5.6 GT/s interface speed. As the new memory IC ...